Πελεκάνος Νικόλαος


τηλ: 30-2810-394107
fax: 30-2810-394106
e-mail: pelekano@materials.uoc.gr

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Βιογραφικά Στοιχεία
Ερευνητικός Φορέας / Ομάδα / Εργαστήριο

Ερευνητικές και Ακαδημαϊκές θέσεις:
Καθηγητής, Τμήμα Επιστήμης και Τεχνολογίας Υλικών, Πανεπιστήμιο Κρήτης
Σπουδές

PhD, Brown University, USA, 1991

 Πεδίο έρευνας:
Οπτοηλεκτρονική, Νανοφωτονική, Οπτικές Ιδιότητες Ημιαγωγών Νανοδομών
 Ακαδημαϊκά επιτεύγματα:
  • A total of 164 publications, including: 7 patents, 41 publications in peer-reviewed journals, 2 papers in special issues, 58 conference papers in peer-reviewed journals, 56 papers in conference proceedings. More than 2100 citations and a corresponding Hirsch factor of 22.
  • 13 invited talks in conferences or workshops and 9 invited talks in academic institutions.
  • Coordination/participation in 6 European, 1 industrial, 15 national, and 4 bilateral research contracts, whose total estimated budget is approximately 3.6 million Euros.
  • Supervised 6 PhD and 6 MSc theses. Currently, supervising 3 PhD candidates.
  • Evaluation expert for European and national research programs.
  • Referee in prestigious academic journals (PRL, PRB, APL, JAP).
  • Co-organized 6 conferences or workshops.
  • Participated in numerous electoral committees for professor or researcher positions.
  • Acted as Department Chairman between 2007-2009, and Vice-Chairman between 2004-2007.
  • Solar Innovation 2010 award, by the French Atomic Energy Commission for a project on nanostructure-based solar cells, 2011-2014. 

Επιλεγμένες δημοσιεύσεις:

-Bragg polariton luminescence from a GaN membrane embedded in all dielectric microcavity,

E. Trichas, N. T. Pelekanos, E. Iliopoulos, E. Monroy, K. Tsagaraki, A. Kostopoulos, P. G. Savvidis, Appl. Phys. Lett. 98, 221101 (2011).

 

- Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: structural and optical properties,

G. E. Dialynas, S. Kalliakos, C. Xenogianni, M. Androulidaki, T. Kehagias, P. Komninou, P. G. Savvidis, Z. Hatzopoulos, N. T. Pelekanos, J. Appl. Phys. 108, 103525 (2010).

 

- Control of polariton scattering in resonant-tunneling double-quantum-well semiconductor microcavities,

G. Christmann, C. Coulson, J. J. Baumberg, N.T. Pelekanos, Z. Hatzopoulos, S.I. Tsintzos, P.G. Savvidis, Phys. Rev. B 82, 113308 (2010).

 

-The effect of annealing on the properties of indium-tin-oxynitride films as ohmic contact for GaN based optoelectronic devices,

M. Himmerlich, M. Koufaki, G. Ecke, C. Mauder, V. Cimalla, J.A. Schaefer, A. Kondilis, N.T. Pelekanos, M. Modreanu, S. Krischok, E. Aperathitis, Applied Materials & Interfaces 1, 1451 (2009).

 

- Resonantly enhanced selective photochemical etching of GaN,

E. Trichas, M. Kayambaki, E. Iliopoulos, N. T. Pelekanos, P. G. Savvidis, Appl. Phys. Lett. 94, 173505 (2009).

 

- Room temperature GaAs exciton-polariton light emitting diode,

S. Tsintzos, P. G. Savvidis, G. Deligeorgis, Z. Hatzopoulos, N. T. Pelekanos, Appl. Phys. Lett. 94, 071109 (2009), selected also to appear in the March 2, 2009 issue of the Virtual Journal of Nanoscale Science & Technology.

 

- Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers,

G. E. Dialynas, G. Deligeorgis, M. Zervos, N. T. Pelekanos, J. Appl. Phys. 104, 113101 (2008).

 

- Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation,

M. Zervos, N. T. Pelekanos, J. Appl. Phys. 104, 054302 (2008).

 

- A GaAs polariton light-emitting diode operating near room temperature,

S. Tsintzos, N. T. Pelekanos, G. Konstantinidis, Z. Hatzopoulos, P. G. Savvidis, Nature 453, 372 (2008).

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