Χαράλαμπος Δημητριάδης


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Βιογραφικά Στοιχεία
Ερευνητικός Φορέας / Ομάδα / Εργαστήριο

Ερευνητικές και Ακαδημαϊκές θέσεις:
- July 2001-Present Professor of Department of Physics, Aristotle University of Thessaloniki.
- July 1992-July 2001 Associate Professor of Department of Physics, Aristotle University of Thessaloniki.
- Feb. 1988-Sept. 1992 Assistant Professor of Department of Physics, Aristotle University of Thessaloniki.
- Jan. 1985-Febr. 1988 Lecturer of Department of Physics, Aristotle University of Thessaloniki.
- May 1998-July 1998 Invited Professor, Laboratoire de Physique des Composants a Semiconducteurs, ENSERG, Grenoble, France.
- May 1996-Oct. 1996 Sabbatical, Laboratoire de Physique des Composants a Semiconducteurs, ENSERG, Grenoble, France.
- July 1988-Febr. 1989 Sabbatical, Μαx-Planck Institut fur Festkorperforschung, Stuttgart, Germany.
- Sept. 1982-Jan. 1985 Postdoctoral Research Fellow, Department of Physics, Aristotle University of Thessaloniki.
- April 1981-Sept. 1981 Postdoctoral Research Fellow, Electrical Engineering Department, University of Thrace.
- June 1973-Aug. 1974 Research Assistant, Department of Physics, Aristotle University of Thessaloniki.
Σπουδές
-B.S. Physics, Aristotle University of Thessaloniki, Greece, April 1974.
-M.S. Solid State Electronics, Electrical Engineering, University of Manchester Institute of Science and Technology (UMIST), England, December 1976.
-Ph.D. Solid State Electronics, Electrical Engineering, University of Manchester Institute of Science and Technology (UMIST), England, July 1979.
 Πεδίο έρευνας:
- Polysilicon and transparent oxide TFTs,
- TFTs characterization and parameter extraction. Electrical and noise properties of the TFTs in depth leading to the development of compact drain current modelling, implemented for circuit simulations.
- Extensive work on fully analytical compact modelling of nano-scale multi-gate MOSFET devices was implemented.
- Low frequency noise of FD-SOI and bulk nanoscale MOSFETs.
 Ακαδημαϊκά επιτεύγματα:
Chapters in international books: 4
- Patents: 2
- Articles in refereed journals: 200
- Articles in refereed proceedings of international conferences: 65
- Papers are referred in the TCAD Technical Library of the SILVACO simulation tools for TFT technology (http://www.silvaco.com/tech_lib/publishedPapers/tft.html
- A memorandum of understanding between Institute National Polytechnique de Grenoble and Aristotle University of Thessaloniki has been activated on 19-6-2007 in order to promote an international cooperation in research, education, science and technology.
- A convention for co-supervision leading to the degree of Doctor of Philosophy, nominated from both Institutions and according to a specific protocol of cooperation signed between Institute National Polytechnique de Grenoble and Aristotle University of Thessaloniki.
Επιλεγμένες δημοσιεύσεις:
- A. Tsormpatzoglou, C.A. Dimitriadis, R. Clerc, G. Pananakakis, G. Ghibaudo, Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs, IEEE Transactions on Electron Devices 55 (9), 2512 (2008).
- A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, G. Ghibaudo, G. Pananakakis and N. Collaert, Analytical modeling for the current-voltage characteristics of lightly-doped symmetric double-gate MOSFETs, Microelectron. Eng. 87, 1764 (2010).
- I. Pappas, S. Siskos and C.A. Dimitriadis, A new threshold voltage compensation technique of poly-Si TFTs for AMOLED displays pixel circuits, Journal of the SID 18/10, 721 (2010).
- E.G. Ioannidis, C.G. Theodorou, A. Tsormpatzoglou, D.H. Tassis, K. Papathanasiou, C.A. Dimitriadis, J. Jomaah, and G. Ghibaudo, Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate MOSFETs, J. Appl. Phys. 108, 064512 (2010).
- I. Pappas, S. Siskos and C.A. Dimitriadis, Polycrystalline silicon TFTs threshold voltage compensated bias current generator for analog circuit design, IEEE/OSA Journal of Display Technology 6, 633 (2010).
- C.G. Theodorou, A. Tsormpatzoglou, C.A. Dimitriadis, S.A. Khan, M.K. Hatalis, J. Jomaah, and G. Ghibaudo, Origin of low-frequency noise in the low drain current range of bottom-gate amorphous IGZO thin-film transistors, IEEE Electron Dev. Lett. 32, 898 (2011).
- E.G. Ioannidis, A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, G. Ghibaudo, and J. Jomaah, Effect of localized charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs, IEEE Trans. Electron Dev. 58, 433, 2011.
- A. Tsormpatzoglou, I. Pappas, D.H. Tassis, C.A. Dimitriadis, and G. Ghibaudo, Analytical threshold voltage model for short-channel asymmetrical dual-gate MOSFETs, Microelectronic Eng. 2011 (in press.
- N. Fasarakis, A. Tsormpatzoglou, D.H. Tassis, C.A. Dimitriadis, K. Papathanasiou, J. Jomaah, and G. Ghibaudo, Analytical unified threshold voltage model of short-channel FinFETs and implementation, Solid-Sate Electron. 64, 34, 2011.
- K. Papathanasiou, C. G. Theodorou, A. Tsormpatzoglou, D. H. Tassis, C. A. Dimitriadis, M. Bucher, G. Ghibaudo Symmetrical unified compact model of short-channel double-gate MOSFETs, Solid-Sate Electron. 2011 (in press).

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